(China (Mainland))
Product Summary
The FDD5353 is an N-Channel Power Trench MOSFET. Application areas of the FDD5353 include Inverter, Synchronous rectifier.
Parametrics
FDD5353 absolute maximum ratings: (1)Drain to Source Voltage: 60V; (2)Gate to Source Voltage: ±20V; (3)Drain Current -Continuous (Package limited): 50A; (4)Single Pulse Avalanche Energy: 100A; (5)Single Pulse Avalanche Energy:253 mJ; (6)Power Dissipation: TC = 25°C: 69W ; (7)Power Dissipation: TA = 25°C: 3.1W; (8)Operating and Storage Junction Temperature Range: -55 to +150 °C.
Features
FDD5353 features: (1)Max rDS(on) = 12.3mΩ at VGS = 10V, ID = 10.7A; (2)Max rDS(on) = 15.4mΩ at VGS = 4.5V, ID = 9.5A; (3)100% UIL Tested; (4)RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDD5353 |
Fairchild Semiconductor |
MOSFET 60V N-Channel PowerTrench |
Data Sheet |
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Pricing (USD) |
Quantity | ||||||||||||
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FDD5202P |
Other |
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Data Sheet |
Negotiable |
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FDD5353 |
Fairchild Semiconductor |
MOSFET 60V N-Channel PowerTrench |
Data Sheet |
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FDD5612 |
Fairchild Semiconductor |
MOSFET 60V N-Ch PowerTrench |
Data Sheet |
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FDD5614P |
Fairchild Semiconductor |
MOSFET 60V P-Ch PowerTrench |
Data Sheet |
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FDD5670 |
Fairchild Semiconductor |
MOSFET 60V N-Ch PowerTrench |
Data Sheet |
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FDD5680 |
Fairchild Semiconductor |
MOSFET N-Ch PowerTrench |
Data Sheet |
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