Product Summary
The FDD5353 is an N-Channel Power Trench MOSFET. Application areas of the FDD5353 include Inverter, Synchronous rectifier.
Parametrics
FDD5353 absolute maximum ratings: (1)Drain to Source Voltage: 60V; (2)Gate to Source Voltage: ±20V; (3)Drain Current -Continuous (Package limited): 50A; (4)Single Pulse Avalanche Energy: 100A; (5)Single Pulse Avalanche Energy:253 mJ; (6)Power Dissipation: TC = 25°C: 69W ; (7)Power Dissipation: TA = 25°C: 3.1W; (8)Operating and Storage Junction Temperature Range: -55 to +150 °C.
Features
FDD5353 features: (1)Max rDS(on) = 12.3mΩ at VGS = 10V, ID = 10.7A; (2)Max rDS(on) = 15.4mΩ at VGS = 4.5V, ID = 9.5A; (3)100% UIL Tested; (4)RoHS Compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDD5353 |
Fairchild Semiconductor |
MOSFET 60V N-Channel PowerTrench |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDD5353 |
Fairchild Semiconductor |
MOSFET 60V N-Channel PowerTrench |
Data Sheet |
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FDD5N50NZTM |
Fairchild Semiconductor |
MOSFET UNIFET2 500V |
Data Sheet |
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FDD5N50UTF_WS |
Fairchild Semiconductor |
MOSFET UniFET 500V 3A |
Data Sheet |
Negotiable |
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FDD5N50TF_WS |
Fairchild Semiconductor |
MOSFET UniFET 500V 4A |
Data Sheet |
Negotiable |
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FDD5N53TM_WS |
Fairchild Semiconductor |
MOSFET N-Ch |
Data Sheet |
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FDD5N50TM_WS |
Fairchild Semiconductor |
MOSFET UniFET 500V 4A |
Data Sheet |
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