(China (Mainland))
Product Summary
The PTFA181001E is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon advanced LDMOS process, the PTFA181001E provides excellent thermal performance and superior reliability.
Parametrics
PTFA181001E absolute maximum ratings: (1)Drain-Source Voltage VDSS: 65 V; (2)Gate-Source Voltage VGS: –0.5 to +12 V; (3)Junction Temperature TJ: 200℃; (4)Total Device Dissipation PD: 407 W; (5)Above 25 ℃ derate by: 2.33 W/℃; (6)Storage Temperature Range:–40 to +150 ℃; (7)Thermal Resistance (TCASE = 70℃, 100 W CW): 0.43 ℃/W.
Features
PTFA181001E features: (1)Thermally-enhanced packages; (2)Broadband internal matching; (3)Typical EDGE performance at 1879.8 MHz, 28 V: Average output power = 45 W; Linear Gain = 16.5 dB; Efficiency = 36%; EVM RMS = 1.8%; (4)Typical CW performance, 1880 MHz, 28 V: Output power at P–1dB = 120 W; Gain 15.5 dB; Efficiency = 52%; (5)Integrated ESD protection: Human Body Model, Class 2 (minimum); (6)Excellent thermal stability, low HCI drift; (7)Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power; (8)Pb-free and RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 PTFA181001E V4 |
Infineon Technologies |
Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 |
Data Sheet |
Negotiable |
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|
PTFA181001E V4 R250 |
Infineon Technologies |
Transistors RF MOSFET Power Hi Pwr RF LDMOS FET 100 W 1805-1880 MHz |
Data Sheet |
Negotiable |
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