(China (Mainland))
Product Summary
The IRFF210 is a repetitive avalanche and dv/dt rated hexfet transistor. The HEXFET technology is the key to International Rectifier advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance. The IRFF210 also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. The IRFF210 is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
IRFF210 absolute maximum ratings: (1)Continuous Drain Current: 2.25A; (2)Continuous Drain Current: 1.50A; (3)Pulsed Drain Current: 9.0A; (4)Max. Power Dissipation: 15 W; (5)Linear Derating Factor: 0.12 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 48 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (9)TJ Operating Junction, TSTG Storage Temperature Range: -55 to 150℃; (10)Lead Temperature: 300 (0.063 in. (1.6mm) from case for 10s); (11)Weight: 0.98(typical) g.
Features
IRFF210 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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IRFF024 |
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IRFF110 |
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IRFF120 |
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IRFF130 |
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IRFF210 |
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IRFF220 |
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