(China (Mainland))
Product Summary
The 2SD1313 is a Silicon NPN Power Transistor. It is designed for High power amplifier applications, High power switching applications.
Parametrics
2SD1313 absolute maximum ratings: (1)VCBO Collector-base voltage: 800 V; (2)VCEO Collector-emitter voltage: 350 V; (3)VEBO Emitter-base voltage: 7 V; (4)IC Collector current: 25 A; (5)ICM Collector current-peak: 35 A; (6)IB Base current: 10 A; (7)IBM Base current-peak: 15 A; (8)PC Collector power dissipation: 200 W; (9)Tj Junction temperature: 150 ℃; (10)Tstg Storage temperature: -55~150 ℃.
Features
2SD1313 features: (1)With TO-3PL package; (2)High power dissipation: PC=200W(TC=25℃); (3)High collector current: IC=25A(DC); (4)High speed switching: tf=0.5μs(typ)(IC=15A); (5)Low saturation voltage: VCE(sat)=1.0V(Max)(IC=15A).
Diagrams
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 2SD1313 |
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2SD1000 |
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2SD1001 |
Other |
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2SD1005 |
Other |
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2SD1012F-SPA |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 0.7A 15V |
Data Sheet |
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2SD1012F-SPA-AC |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 0.7A 15V |
Data Sheet |
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2SD1012G-SPA |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 0.7A 15V |
Data Sheet |
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