Product Summary

The 20N60S5 is a Cool MOS Power Transistor.

Parametrics

20N60S5 absolute maximum ratings: (1)Continuous drain current ID: 20A at TC=25℃; 13A at TC=100℃; (2)Pulsed drain current TC=25℃ ID puls: 40A; (3)Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS: 690 mJ; (4)Avalanche energy (repetitive, limited by Tjmax)ID = 20 A, VDD = 50 V EAR: 1mJ; (5)Avalanche current (repetitive, limited by Tjmax) IAR: 20 A; (6)Reverse diode dv/dt IS=20A, VDS<VDSS, di/dt=100A/μs, Tjmax=150℃ dv/dt: 6 kV/μs; (7)Gate source voltage VGS: ±20 V; (8)Power dissipation TC=25℃ Ptot: 208 W; (9)Operating and storage temperature Tj , Tstg: -55 to +150 ℃.

Features

20N60S5 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Improved periodic avalanche rating; (5)Extreme dv/dt rated; (6)Optimized capacitances; (7)Improved noise immunity.

Diagrams

20N60S5 diagram

20N60BD1
20N60BD1
Other

Data Sheet
Negotiable